10-FY06RIA080MF-M537D68 Datasheet, PDF (10/31 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
1
0,8
0,6
0,4
0,2
0
0
10
20
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
8,0
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
40
30
20
10
0
0
10
20
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
8,0
Ω
10-FY06RIA080MF-M537D68
preliminary datasheet
Low Side
Low Side MOSFET and High Side FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1
Q_{rr High T}
0,8
FWD
0,6
0,4
Q_{rr Low T}
0,2
0
30
I C (A)
40
0
10
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
20
A
10
V
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
60
40
Q_{rr High T}
Q_{rr Low T}
30
R gon ( Ω)
40
FWD
20
0
30
I C (A)
40
0
10
20
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
20
A
10
V
I_{RRM High T}
I_{RRM Low T}
30
R gon ( Ω)
40
Copyright by Vincotech
10
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