10-FY06RIA080MF-M537D68 Datasheet, PDF (7/31 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 1
Typical output characteristics
I_C = f(V_CE)
120
100
80
60
40
20
0
0
5
10
At
t_p =
T_j =
V_GE from
250
μs
25
°C
0 V to 20 V in steps of 2 V
10-FY06RIA080MF-M537D68
preliminary datasheet
Low Side
Low Side MOSFET and High Side FWD
MOSFET
Figure 2
Typical output characteristics
I_C = f(V_CE)
120
100
80
60
40
20
15
V CE (V) ²⁰
0
0
5
10
At
t_p =
T_j =
V_GE from
250
μs
125
°C
0 V to 20 V in steps of 2 V
MOSFET
15
V CE (V)
20
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
30
MOSFET
25
20
15
T_j = T_jmax-25°C
T_j = 25°C
10
5
0
0
2
4
At
t_p =
250
μs
V_CE =
10
V
6
V GE (V) ⁸
Figure 4
Typical FWD forward current as
a function of forward voltage
I_F = f(V_F)
150
120
90
60
30
T_j = T_jmax-25°C
T_j = 25°C
0
0
1
2
3
At
t_p =
250
μs
FWD
4
V F (V)
5
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7
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