10-FY07BIA041MF-M528E68 Datasheet, PDF (8/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MF-M528E68
preliminary datasheet
Pseudo H-Bridge
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2.0
1.5
1.0
0.5
0.0
0
At
10
20
30
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
80
Q_{rr High T}
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1.5
1.2
Q_{rr Low T}
0.9
0.6
0.3
0
40
50 _{I C (A)} 60
0
5
10
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
FWD
Q_{rr High T}
Q_{rr Low T}
15
R gon (Ω)
20
FWD
60
60
I_{RRM High T}
40
40
I_{RRM Low T}
20
20
0
0
0
10
20
30
40
50
60
I C (A)
0
5
10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
I_{RRM High T}
I_{RRM Low T}
15
R gon (Ω)
20
Copyright by Vincotech
8
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