10-FY07BIA041MF-M528E68 Datasheet, PDF (6/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MF-M528E68
preliminary datasheet
Pseudo H-Bridge
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0.6
0.5
0.4
0.3
0.2
0.1
MOSFET
E_{on High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1.0
0.8
E_{on Low T}
0.6
0.4
E_{off High T}
E_{off Low T}
0.2
0.0
0
10
20
30
40
50
60
I C (A)
0.0
0
5
10
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
400
V
10
V
2
Ω
2
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
400
V
10
V
30
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0.6
0.5
0.4
FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0.4
0.3
0.3
0.2
E_{rec Low T}
0.2
0.1
0.1
0.0
0
10
20
30
40
50 _{I C (A)} 60
0.0
0
5
10
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
R_gon =
2
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
I_C =
30
A
MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
15
R G (Ω) ²⁰
FWD
E_{rec High T}
E_{rec Low T}
15
R G (Ω) ²⁰
Copyright by Vincotech
6
Revision: 1