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| 10-FY07BIA041MF-M528E68 Datasheet, PDF (16/25 Pages) Vincotech – Low inductive 12mm flow1 package | |||
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10-FY07BIA041MF-M528E68
preliminary datasheet
INPUT BOOST
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
15000
dIrec/dt T
di0/dt T
12000
9000
6000
3000
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
20000
15000
BOOST FWD
dIrec/dt T
dI0/dt T
10000
5000
0
0
10
20
30
40
50 I C (A) 60
0
0
4
8
12
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
10
V
2
â¦
At
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
30
A
10
V
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST MOSFET
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
16
R Gon ( Ω) 20
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0.67
K/W
IGBT thermal model values
R (C/W)
3.56E-02
8.98E-02
3.76E-01
1.04E-01
3.74E-02
2.56E-02
Tau (s)
5.26E+00
9.94E-01
1.88E-01
6.08E-02
1.20E-02
9.33E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1.94
K/W
FWD thermal model values
R (C/W)
4.65E-02
1.38E-01
7.19E-01
4.17E-01
3.26E-01
1.85E-01
Tau (s)
5.96E+00
8.06E-01
1.42E-01
4.54E-02
1.02E-02
1.84E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
Copyright by Vincotech
16
Revision: 1
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