10-FY07BIA041MF-M528E68 Datasheet, PDF (13/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MF-M528E68
preliminary datasheet
INPUT BOOST
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
0.5
0.4
0.3
0.2
0.1
BOOST MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
400
V
10
V
2
Ω
2
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0.8
50
60
I C (A)
0
0
4
8
12
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
400
V
10
V
30
A
BOOST FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0.5
BOOST MOSFET
E_{on High T}
E_{off High T}
E_{off Low T}
E_{on Low T}
16 R _G ( Ω ) 20
BOOST FWD
E_{rec High T}
0.4
0.6
0.3
E_{rec High T}
0.4
E_{rec Low T}
0.2
0.2
0.1
E_{rec Low T}
0
0
0
10
20
30
40
50 _{I C (A)} 60
0
5
10
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
I_D =
30
A
15
R _G( Ω ) 20
Copyright by Vincotech
13
Revision: 1