10-FY07BIA041MF-M528E68 Datasheet, PDF (7/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MF-M528E68
preliminary datasheet
Pseudo H-Bridge
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1.00
MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1.00
t_doff
0.10
0.10
t_don
0.01
t_r
0.01
t_f
0.00
0
10
20
30
40
50
60
I C (A)
0.00
0
5
10
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
I_C =
30
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0.08
FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0.15
0.12
0.06
0.09
0.04
0.06
0.02
t_{rr Low T}
0.03
0.00
0
10
20
30
40
50
60
I C (A)
0.00
0
5
10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
MOSFET
t_doff
t_don
t_r
t_f
15
20
R G (Ω)
FWD
t_{rr High T}
t_{rr Low T}
15
R gon (Ω)
20
Copyright by Vincotech
7
Revision: 1