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10-FY07BIA041MF-M528E68 Datasheet, PDF (2/25 Pages) Vincotech – Low inductive 12mm flow1 package
Input Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
Pseudo H-Bridge MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Pseudo H-Bridge Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
DC link Capacitor
Max.DC voltage
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
VRRM
IF
IFRM
Ptot
Tjmax
Tj=25°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
10-FY07BIA041MF-M528E68
preliminary datasheet
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
650
V
27
A
35
180
A
49
W
74
175
°C
VDS
ID
IDpulse
Ptot
Vgs
Tjmax
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Tc=25°C
Th=80°C
Tc=80°C
650
V
35
A
42
255
A
111
W
168
±20
V
150
°C
VRRM
IF
IFRM
Ptot
Tjmax
Tj=25°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
VMAX
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tc=25°C
650
V
27
A
36
180
A
49
W
74
175
°C
630
V
Tstg
-40…+125
°C
Top
-40…+(Tjmax - 25)
°C
Vis
t=2s
DC voltage
4000
V
min 12,7
mm
min 12,7
mm
2
Copyright by Vincotech
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