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10-FY07BIA041MF-M528E68 Datasheet, PDF (11/25 Pages) Vincotech – Low inductive 12mm flow1 package
10-FY07BIA041MF-M528E68
preliminary datasheet
Pseudo H-Bridge
Figure 25
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE)
103
102
100mS
101
MOSFET
Figure 26
Gate voltage vs Gate charge
VGE = f(Qg)
10
10uS
100uS
8
1mS
10mS
6
MOSFET
120V
480V
100
10-1
100
At
D=
Th =
VGE =
Tj =
101
single pulse
80
ºC
15
V
Tjmax
ºC
DC
4
2
102
V CE (V)
103
0
0
50
100
150
200
250
300
Q g (nC)
At
IC =
50
A
Copyright by Vincotech
11
Revision: 1