10-FY07BIA041MF-M528E68 Datasheet, PDF (22/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MF-M528E68
preliminary datasheet
Switching Definitions H-Bridge MOSFET
Figure 5
H-Bridge MOSFET
Turn-off Switching Waveforms & definition of t_Eoff
150
%
E_off
I_{C 1%}
100
50
V_{GE 90%}
0
t_Eoff
P_off
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
200
H-Bridge MOSFET
%
P_on
150
100
E_on
50
V_{GE 10%}
0
V_{CE 3%}
t_Eon
-50
-0.1
P_off (100%) =
E_off (100%) =
t_Eoff =
0
0.1
12.15
kW
0.05
mJ
0.18
μs
time (us)
0.2
-50
4.45
P_on (100%) =
E_on (100%) =
t_Eon =
4.49
4.53
12.15
kW
0.31
mJ
0.07
μs
4.57
4.61
time(us)
Figure 7
Gate voltage vs Gate charge (measured)
15
10
5
0
-5
-10
-50
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
0
50
100
0
V
10
V
400
V
30
A
186.04 nC
H-Bridge MOSFET
150
200
Qg (nC)
Figure 8
Turn-off Switching Waveforms & definition of t_rr
150
%
I_d
100
H-Bridge FWD
t_rr
50
V_d
0
-50
fitted
I_{RRM 10%}
-100
-150
-200
-250
4.5
4.52
I_{RRM 90%}
I_{RRM 100%}
4.54
4.56
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
400
V
30
A
-61
A
0.04
μs
4.58
4.6
time(us)
Copyright by Vincotech
22
Revision: 1