10-FY07BIA041MF-M528E68 Datasheet, PDF (5/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 1
Typical output characteristics
I_C = f(V_CE)
100
80
60
40
20
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
μs
25
°C
0 V to 20 V in steps of 2 V
10-FY07BIA041MF-M528E68
preliminary datasheet
Pseudo H-Bridge
MOSFET
Figure 2
Typical output characteristics
I_C = f(V_CE)
100
80
60
40
20
4 _{V CE (V)}
5
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
μs
125
°C
0 V to 20 V in steps of 2 V
MOSFET
4 _{V CE (V)}
5
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
40
MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
300
250
30
200
20
150
10
T_j = T_jmax-25°C
100
T_j = T_jmax-25°C
50
T_j = 25°C
T_j = 25°C
0
0
0
2
4
6
V GE (V)
8
0
2
4
6
At
t_p =
250
μs
V_CE =
10
V
At
t_p =
250
μs
FWD
8
V F (V) ¹⁰
Copyright by Vincotech
5
Revision: 1