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| TH50VSF3680 Datasheet, PDF (42/55 Pages) Toshiba Semiconductor – SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE | |||
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TH50VSF3680/3681AASB
FLASH AUTO-PROGRAM OPERATION ( WE -CONTROLLED)
Address
555H
2AAH
555H
PA
PA
tCMD
CEF
OE
tOES
WE
tOEHP
tPPW
DIN
AAH
55H
A0H
PD
DOUT
tVCS
VCCf
Hi-Z
Note: Word Mode address shown.
PA: Program address
PD: Program data
DQ7 DOUT
FLASH AUTO CHIP ERASE/AUTO BLOCK ERASE OPERATION ( WE -CONTROLLED)
Address
CEF
555H
tCMD
2AAH
555H
555H
2AAH
555H/BA
OE
tOES
WE
DIN
AAH
55H
80H
tVCS
VCCf
Notes: Word mode address shown
BA: Block address for Auto Block Erase operation
AAH
55H
10H/30H
2001-03-06 42/55
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