TH50VSF3680 Datasheet, PDF (18/55 Pages) Toshiba Semiconductor – SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

ABSOLUTE MAXIMUM RATINGS
TH50VSF3680/3681AASB
SYMBOL
PARAMETER
RANGE
V_CC
V_IN
V_CCs/V_CCf Supply Voltage
Input Voltage⁽¹⁾
−0.3~4.2
−0.3~4.2
V_DQ
Input/Output Voltage
−0.5~V_CC + 0.5 (≤ 4.2)
T_opr
Operating Temperature
−20~85
P_D
Power Dissipation
0.6
T_solder
Soldering Temperature (10 s)
260
I_OSHORT
Output Short Circuit Current⁽²⁾
100
N_EW
Erase/Program Cycling Capability
100,000
T_stg
Storage Temperature
−55~125
(1) −2.0 V for pulse width ≤ 20 ns
(2) Output shorted for no more than one second. No more than one output shorted at a time
UNIT
V
V
V
°C
W
°C
mA
Cycle
°C
HARDWARE STATUS FLAGS
STATUS
DQ7
DQ6
DQ5
DQ3
DQ2 RY/BY
In Progress
Auto Programming
Read in Program Suspend⁽¹⁾
In Auto-
Erase
Selected⁽²⁾
Erase Hold Time _{Non-Selected(3)}
Auto-Erase
Selected
Non-Selected
DQ 7
Data
0
0
0
0
Toggle
Data
Toggle
Toggle
Toggle
Toggle
0
Data
0
0
0
0
0
1
0
Data
Data
Hi-Z
0
Toggle
0
0
1
0
1
Toggle
0
1
1
0
Read
In Erase
Suspend
Programming
Selected
Non-Selected
Selected
Non-Selected
1
Data
DQ 7
DQ 7
1
Data
Toggle
Toggle
0
Data
0
0
0
Toggle
Hi-Z
Data
Data
Hi-Z
0
Toggle
0
0
1
0
Time Limit
Exceeded
Auto Programming
Auto-Erase
Programming in Erase Suspend
DQ 7
Toggle
1
0
Toggle
1
DQ 7
Toggle
1
0
1
0
1
N/A
0
0
N/A
0
Notes: DQ outputs cell data and RY/BY to high impedence when the operation has completed.
DQ0 and DQ1 pins are reserved for futyre use.
DQ0, DQ1 and DQ4 output 0.
(1) Data output from an address to which Write is being performed are undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
During Auto Chip Erase, all blocks are selected.
(3) Output when a block address not selected for Auto Block Erase of same bank as selected block is specified and data is
read from there.
2001-03-06 18/55