MSP430F241X_11 Datasheet, PDF (75/107 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430F241x, MSP430F261x
MIXED SIGNAL MICROCONTROLLER
SLAS541G -- JUNE 2007 -- REVISED MARCH 2011
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
V_CC
MIN TYP MAX UNIT
V_{CC(PGM/ERASE)}
f_FTG
I_PGM
I_ERASE
t_CPT
t_CMErase
Program and erase supply voltage
Flash Timing Generator frequency
Supply current from DV_CC during program
Supply current from DV_CC during erase
Cumulative program time
Cumulative mass erase time
Program/Erase endurance
See Note 1
2.2
257
2.2 V/ 3.6 V
2.2 V/ 3.6 V
2.2 V/ 3.6 V
2.2 V/ 3.6 V
20
10⁴
3.6 V
476 kHz
3
5 mA
3
7 mA
10 ms
ms
10⁵
cycles
t_Retention
Data retention duration
T_J = 25C
100
years
t_Word
Word or byte program time
See Note 2
35
t_FTG
t_{Block, 0}
Block program time for first byte or word
See Note 2
30
t_FTG
t_{Block, 1-63}
Block program time for each additional byte or word See Note 2
21
t_FTG
t_{Block, End}
Block program end-sequence wait time
See Note 2
6
t_FTG
t_{Mass Erase}
Mass erase time
See Note 2
10593
t_FTG
t_{Seg Erase}
Segment erase time
See Note 2
4819
t_FTG
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (t_FTG = 1/f_FTG).
RAM
PARAMETER
TEST CONDITIONS
MIN MAX UNIT
VRAMh
See Note 1
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage when the data in program memory RAM remain unchanged. No program execution
should take place during this supply voltage condition.
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