MSP430FR5994 Datasheet, PDF (61/166 Pages) Texas Instruments – Mixed-Signal Microcontrollers

www.ti.com
MSP430FR5994, MSP430FR59941, MSP430FR5992, MSP430FR5964, MSP430FR5962
SLASE54 – MARCH 2016
COMP_E (continued)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
CEON = 0 → 1, V_IN+ and V_IN– from pins,
Overdrive ≥ 20 mV, CEPWRMD = 00
V_CC
MIN TYP
0.9
t_{EN_CMP}
Comparator enable
time
CEON = 0 → 1, V_IN+ and V_IN– from pins,
Overdrive ≥ 20 mV, CEPWRMD = 01
0.9
CEON = 0 → 1, V_IN+ and V_IN– from pins,
Overdrive ≥ 20 mV, CEPWRMD = 10
15
t_{EN_CMP_VREF}
Comparator and
reference ladder and
reference voltage
enable time
CEON = 0 → 1, CEREFLX = 10,
CERSx = 10 or 11,
CEREF0 = CEREF1 = 0x0F, REFON = 0
120
t_{EN_CMP_RL}
Comparator and
reference ladder
enable time
CEON = 0 → 1, CEREFLX = 10, CERSx = 10,
REFON = 1, CEREF0 = CEREF1 = 0x0F,
10
V_{CE_REF}
Reference voltage for a VIN = reference into resistor ladder,
given tap
n = 0 to 31
VIN ×
(n +
0.5)
/ 32
VIN ×
(n + 1)
/ 32
MAX UNIT
1.5
1.5 µs
65
220 µs
30 µs
VIN ×
(n +
1.5)
V
/ 32
5.11.12 FRAM
FRAM is a nonvolatile memory that reads and writes like standard SRAM. The FRAM can be read in a
similar fashion to SRAM and needs no special requirements. Similarly, any writes to unprotected
segments can be written in the same fashion as SRAM. Table 5-32 lists the operating characteristics of
the FRAM.
Table 5-32. FRAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
Read and write endurance
TEST CONDITIONS
MIN
10¹⁵
TYP MAX UNIT
cycles
t_Retention Data retention duration
I_WRITE
I_ERASE
t_WRITE
Current to write into FRAM
Erase current
Write time
t_READ Read time
T_J = 25°C
T_J = 70°C
T_J = 85°C
NWAITSx = 0
NWAITSx = 1
100
40
10
I_READ ⁽¹⁾
N/A ⁽²⁾
t_READ ⁽³⁾
1 / f_SYSTEM ⁽⁴⁾
2 / f_SYSTEM ⁽⁴⁾
years
nA
nA
ns
ns
ns
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read
current I_READ is included in the active mode current consumption I_AM,FRAM.
(2) N/A = not applicable. FRAM does not require a special erase sequence.
(3) Writing into FRAM is as fast as reading.
(4) The maximum read (and write) speed is specified by f_SYSTEM using the appropriate wait state settings (NWAITSx).
Copyright © 2016, Texas Instruments Incorporated
Specifications
61
Submit Documentation Feedback
Product Folder Links: MSP430FR5994 MSP430FR59941 MSP430FR5992 MSP430FR5964 MSP430FR5962