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LM3S308 Datasheet, PDF (497/537 Pages) Texas Instruments – ARM and Thumb are registered trademarks and Cortex is a trademark | |||
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Stellaris® LM3S308 Microcontroller
18.1.6
18.2
18.2.1
Table 18-5. Detailed Power Specifications
Parameter Parameter Name
Conditions
Run mode 1 (Flash loop) LDO = 2.50 V
Code = while(1){} executed out of Flash
Peripherals = All clock-gated ON
System Clock = 25 MHz (with PLL)
Run mode 2 (Flash loop) LDO = 2.50 V
Code = while(1){} executed out of Flash
Peripherals = All clock-gated OFF
IDD_RUN
Run mode 1 (SRAM
loop)
System Clock = 25 MHz (with PLL)
LDO = 2.50 V
Code = while(1){} executed in SRAM
Peripherals = All clock-gated ON
System Clock = 25 MHz (with PLL)
Run mode 2 (SRAM
loop)
LDO = 2.50 V
Code = while(1){} executed in SRAM
Peripherals = All clock-gated OFF
System Clock = 25 MHz (with PLL)
IDD_SLEEP Sleep mode
LDO = 2.50 V
Peripherals = All clock-gated OFF
System Clock = 25 MHz (with PLL)
IDD_DEEPSLEEP Deep-Sleep mode
LDO = 2.25 V
Peripherals = All OFF
System Clock = MOSC/16
Nom Max Unit
60
65
mA
40
45
mA
50
55
mA
30
35
mA
18
21
mA
950 1150
μA
Flash Memory Characteristics
Table 18-6. Flash Memory Characteristics
Parameter Parameter Name
Min
PECYC
Number of guaranteed program/erase cycles
before failurea
10,000
TRET
Data retention at average operating temperature
10
of 85ËC (industrial) or 105ËC (extended)
TPROG
Word program time
20
TERASE
Page erase time
20
TME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Nom
Max
100,000
-
-
-
-
-
-
-
-
250
Unit
cycles
years
µs
ms
ms
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
June 18, 2012
497
Texas Instruments-Production Data
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