AM1802_16 Datasheet, PDF (47/182 Pages) Texas Instruments – AM1802 ARM® Microprocessor

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AM1802
SPRS710E – NOVEMBER 2010 – REVISED MARCH 2014
5.5 Electrical Characteristics Over Recommended Ranges of Supply Voltage and
Operating Junction Temperature (Unless Otherwise Noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
High-level output voltage
DVDD= 3.15V, I_OH = -4 mA
2.4
V_OH
(dual-voltage LVCMOS IOs at 3.3V)⁽¹⁾
DVDD= 3.15V, I_OH = -100 μA
2.95
High-level output voltage
(dual-voltage LVCMOS IOs at 1.8V)⁽¹⁾
DVDD= 1.71V, I_OH = -2 mA
DVDD-0.45
Low-level output voltage
DVDD= 3.15V, I_OL = 4mA
V_OL
(dual-voltage LVCMOS I/Os at 3.3V)
DVDD= 3.15V, I_OL = 100 μA
Low-level output voltage
(dual-voltage LVCMOS I/Os at 1.8V)
DVDD= 1.71V, I_OL = 2mA
V_I = VSS to DVDD without opposing
internal resistor
Input current⁽¹⁾
(dual-voltage LVCMOS I/Os)
V_I = VSS to DVDD with opposing
internal pullup resistor ⁽³⁾
70
I_I ⁽²⁾
V_I = VSS to DVDD with opposing
internal pulldown resistor ⁽³⁾
-75
Input current (DDR2/mDDR I/Os)
V_I = VSS to DVDD with opposing
internal pulldown resistor ⁽³⁾
-77
I_OH
High-level output current⁽¹⁾
(dual-voltage LVCMOS I/Os)
I_OL
Low-level output current⁽¹⁾
(dual-voltage LVCMOS I/Os)
Input capacitance (dual-voltage
LVCMOS)
3
Capacitance
Output capacitance (dual-voltage
LVCMOS)
3
MAX
0.4
0.2
0.45
±9
310
-270
-286
-6
6
UNIT
V
V
V
V
V
V
μA
μA
μA
μA
mA
mA
pF
pF
(1) These IO specifications apply to the dual-voltage IOs only and do not apply to the DDR2/mDDR interface. DDR2/mDDR IOs are 1.8V
IOs and adhere to the JESD79-2A standard. USB0 I/Os adhere to the USB2.0 standard.
(2) I_I applies to input-only pins and bi-directional pins. For input-only pins, I_I indicates the input leakage current. For bi-directional pins, I_I
indicates the input leakage current and off-state (Hi-Z) output leakage current.
(3) Applies only to pins with an internal pullup (IPU) or pulldown (IPD) resistor. The pull-up and pull-down strengths shown represent the
minimum and maximum strength across process variation.
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