DS90CR286AT-Q1 Datasheet, PDF (4/29 Pages) Texas Instruments – Rising Edge Data Strobe LVDS Receiver 28-Bit Channel Link 66 MHz

DS90CR286AT-Q1
SNLS498A – NOVEMBER 2015 – REVISED DECEMBER 2015
6 Specifications
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6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) ⁽¹⁾
MIN
Supply Voltage (V_CC)
−0.3
LVCMOS Output Voltage
−0.3
LVDS Receiver Input Voltage
−0.3
Operating Junction Temperature
Lead Temperature (Soldering, 4 sec)
Storage temperature, T_stg
−65
MAX
4
(V_CC + 0.3)
(V_CC + 0.3)
150
260
150
UNIT
V
V
V
°C
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
V_(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002⁽¹⁾
Charged-device model (CDM), per AEC Q100-011
VALUE
±4000
±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply Voltage (V_CC)
Operating Free Air Temperature (T_A)
Receiver Input Range
Supply Noise Voltage (V_Noise)
MIN
NOM
MAX
UNIT
3.0
3.3
3.6
V
−40
25
105
°C
0
2.4
V
100
mVp-p
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
DS90CR286AT-Q1
DGG (TSSOP)
UNIT
56 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
64.6
20.6
33.3
°C/W
1.0
33.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
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