DRV8850_16 Datasheet, PDF (16/30 Pages) Texas Instruments – Low-Voltage H-Bridge IC with LDO Voltage Regulator

DRV8850
SLVSCC0B – NOVEMBER 2013 – REVISED DECEMBER 2015
INxH
INxL
High-side
Gate
Low-side
Gate
HS Slew Rate
LS Slew Rate
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HS Slew Rate
LS Slew Rate
OUTx
t_DELAY
t_DEAD
t_F
t_DELAY
t_R
t_DEAD
Figure 17. High-Side Slow Decay or Fast Decay Operation – Current Sunk into OUTx
7.3.7 Power Supplies and Input Pins
An internal charge pump generates a voltage greater than VCC that is used to drive the internal N-channel
power MOSFETs. The charge pump requires a capacitor between the VCP and VCC pins. TI recommends
bypassing VCC to ground with 0.1-μF and 10-μF ceramic capacitors, placing them as close as possible to the IC.
Each input pin has a weak pulldown resistor to ground (see Electrical Characteristics for more details).
The input pins should not be driven to more than 0.6 V without the VCC power supply removed.
7.3.8 LDO Voltage Regulator
An LDO regulator is integrated into the DRV8850 device. The LDO regulator is typically used to provide the
supply voltage for a low-power microcontroller. For proper operation, bypass the LDOOUT pin to GND using a
ceramic capacitor. The recommended value for this component is 2.2 μF.
Two external resistors are used to set the LDO voltage (V_LDO) by creating a voltage divider between LDOOUT
and LDOFB. The LDO output voltage can be given by:
V_LDO = V_FB ´ (1+ R1/ R2)V
where
• R1 is located between LDOOUT and LDOFB
• R2 is between LDOFB and GND
(2)
16
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