BQ24157 Datasheet, PDF (7/39 Pages) Texas Instruments – Fully Integrated Switch-Mode Charger With USB Compliance and USB-OTG Support

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bq24157
SLUSB80 – SEPTEMBER 2012
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), T_J = –40°C to 125°C, T_J = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
PWM
Voltage from BOOT pin to SW pin
During charge or boost operation
Internal top reverse blocking MOSFET on-
resistance
I_IN(LIMIT) = 500 mA, Measured from VBUS to PMID
Internal top N-channel Switching MOSFET on-
resistance
Internal bottom N-channel MOSFET on-
resistance
Measured from PMID to SW,
V_BOOT – V_SW= 4V
Measured from SW to PGND
f_(OSC)
Oscillator frequency
Frequency accuracy
D_(MAX)
D_(MIN)
Maximum duty cycle
Minimum duty cycle
Synchronous mode to non-synchronous mode
transition current threshold⁽³⁾
Low-side MOSFET cycle-by-cycle current sensing
CHARGE MODE PROTECTION
V_{OVP_IN_USB} Input VBUS OVP threshold voltage
VBUS threshold to turn off converter during charge
V_OVP
Output OVP threshold voltage
V_(OVP) hysteresis
V_(CSOUT) threshold over V_(OREG) to turn off charger
during charge
Lower limit for V_(CSOUT) falling from above V_(OVP)
I_LIMIT
Cycle-by-cycle current limit for charge
Charge mode operation
V_SHORT
Trickle to fast charge threshold
V_SHORT hysteresis
V_(CSOUT) rising
V_(CSOUT) falling below V_SHORT
I_SHORT
Trickle charge charging current
V_(CSOUT) ≤ V_SHORT)
BOOST MODE OPERATION FOR V_BUS (OPA_MODE = 1, HZ_MODE = 0)
V_{BUS_B}
Boost output voltage (to VBUS pin)
2.5V < V_(CSOUT) < 4.5 V
Boost output voltage accuracy
Including line and load regulation
I_BO
I_BLIMIT
V_BUSOVP
V_BATMAX
V_BATMIN
Maximum output current for boost
Cycle by cycle current limit for boost
Overvoltage protection threshold for boost (VBUS
pin)
V_{BUS_B} = 5.05 V, 2.5 V < V_(CSOUT) < 4.5 V,
T_J= 0°C – 125°C
V_{BUS_B} = 5.05 V, 2.5 V < V_(CSOUT) < 4.5 V
Threshold over VBUS to turn off converter during
boost
V_BUSOVP hysteresis
Maximum battery voltage for boost (CSOUT pin)
V_BATMAX hysteresis
Minimum battery voltage for boost (CSOUT pin)
V_BUS falling from above V_BUSOVP
V_(CSOUT) rising edge during boost
V_(CSOUT) falling from above V_BATMAX
During boosting
Before boost starts
Boost output resistance at high-impedance mode
(From VBUS to PGND)
CD = 1 or HZ_MODE = 1
PROTECTION
T_SHTDWN)
Thermal trip
Thermal hysteresis
T_CF
Thermal regulation threshold
t_15M
15 minute safety timer
Charge current begins to reduce
15 Minute mode
MIN TYP
180
120
110
–10%
0
3.0
99.5%
100
6.3
6.5
110
117
11
1.8
2.4
2.0
2.1
100
20
30
5.05
–3%
200
1.0
5.8
6.0
162
4.75
4.9
200
2.5
2.9
217
165
10
120
12
MAX UNIT
6.5
V
250
250 mΩ
210
10%
MHz
mA
6.7
V
121
%V_OREG
3.0
A
2.2
V
mV
40 mA
V
3%
mA
A
6.2
V
mV
5.05
V
mV
V
3.05
V
kΩ
°C
15 m
(3) Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low.
Copyright © 2012, Texas Instruments Incorporated
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