BQ24157 Datasheet, PDF (5/39 Pages) Texas Instruments – Fully Integrated Switch-Mode Charger With USB Compliance and USB-OTG Support

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bq24157
SLUSB80 – SEPTEMBER 2012
ELECTRICAL CHARACTERISTICS
Circuit of Figure 2, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), T_J = –40°C to 125°C, T_J = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
INPUT CURRENTS
VBUS > VBUS(min), PWM switching
10
mA
I_(VBUS)
I_lgk
VBUS supply current control
Leakage current from battery to VBUS pin
VBUS > VBUS(min), PWM NOT switching
0°C < T_J < 85°C, CD=1 or HZ_MODE=1
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V,
High Impedance mode, VBUS = 0 V
5
15
23 μA
5 μA
Battery discharge current in High Impedance
mode, (CSIN, CSOUT, SW pins)
0°C < T_J < 85°C, V_(CSOUT) = 4.2 V,
High Impedance mode, V = 0 V, SCL, SDA,
OTG = 0 V or 1.8 V
23 μA
VOLTAGE REGULATION
V_(OREG)
Output regulation voltage programable range
Voltage regulation accuracy
Operating in voltage regulation, programmable
T_A = 25°C
3.5
–0.5%
–1%
4.44
V
0.5%
1%
CURRENT REGULATION (FAST CHARGE)
V_(LOWV) ≤ V_(CSOUT) < V_(OREG),
I_O(CHARGE)
Output charge current programmable range
VBUS > V_(SLP), R_(SNS) = 68 mΩ, LOW_CHG=0,
550
Programmable
1250 mA
Low charge current
V_LOWV ≤ V_CSOUT < V_OREG, VBUS >V_SLP, R_SNS= 68
mΩ,
LOW_CHG=1, OTG=High
325
350 mA
Regulation accuracy of the voltage across R_(SNS)
(for charge current regulation)
V_(IREG) = I_O(CHARGE) × R_(SNS)
WEAK BATTERY DETECTION
37.4 mV ≤ V_(IREG)< 44.2mV
44.2 mV ≤ V_(IREG)
–3.5%
-3%
3.5%
3%
V_(LOWV)
Weak battery voltage threshold programmable
range^{2 (1)}
Adjustable using I²C control
3.4
3.7
V
Weak battery voltage accuracy
–5%
5%
Hysteresis for V_(LOWV)
Deglitch time for weak battery threshold
CD, OTG and SLRST PIN LOGIC LEVEL
Battery voltage falling
Rising voltage, 2-mV over drive, t_RISE = 100 ns
100
mV
30
ms
V_IL
Input low threshold level
V_IH
Input high threshold level
I_(bias)
Input bias current
CHARGE TERMINATION DETECTION
Voltage on control pin is 5 V
0.4
V
1.3
V
1.0 µA
I_(TERM)
Termination charge current programmable range
Deglitch time for charge termination
Regulation accuracy for termination current
across R_(SNS)
V_{(IREG_TERM)} = I_O(TERM) × R_(SNS)
V_(CSOUT) > V_(OREG) – V_(RCH), VBUS > V_(SLP),
R_(SNS) = 68 mΩ, Programmable
Both rising and falling, 2-mV overdrive,
t_RISE, t_FALL = 100 ns
3.4 mV ≤ V_{(IREG_TERM)} ≤ 6.8 mV
6.8 mV < V_{(IREG_TERM)} ≤ 17 mV
17 mV < V_{(IREG_TERM)} ≤ 27.2 mV
50
–15%
–10%
–5.5%
400 ^mA
30
ms
15%
10%
5.5%
(1) While in 15-min mode, if a battery that is charged to a voltage higher than this voltage is inserted, the charger enters Hi-Z mode and
awaits I²C commands.
Copyright © 2012, Texas Instruments Incorporated
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