CC2564_15 Datasheet, PDF (27/47 Pages) Texas Instruments – Bluetooth® and Dual-Mode Controller

CC256x
www.ti.com
SWRS121D – JULY 2012 – REVISED JANUARY 2014
4 Device Specifications
Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board
(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.
4.1 General Device Requirements and Operation
4.1.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise indicated)
NOTE
Unless otherwise indicated, all parameters are measured as follows:
VDD_IN = 3.6 V, VDD_IO = 1.8 V
See ⁽¹⁾
Value
Unit
Ratings over operating free-air temperature range
VDD_IN
Supply voltage range
–0.5 to 4.8
V ⁽²⁾
VDD_IO
Input voltage to analog pins⁽³⁾
–0.5 to 2.145
V
–0.5 to 2.1
V
Input voltage to all other pins
Operating ambient temperature range⁽⁴⁾
–0.5 to (VDD_IO + 0.5)
V
–40 to 85
°C
Storage temperature range
–55 to 125
°C
ESD stress
voltage ⁽⁵⁾
Bluetooth RF inputs
Human body model (HBM)⁽⁶⁾
Charged device model (CDM)⁽⁷⁾
Device
Device
10
dBm
500
V
250
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 5, Reference Design for Power and
Radio Connections.
(3) Analog pins: BT_RF, XTALP, and XTALM
(4) The reference design supports a temperature range of –20°C to 70°C because of the operating conditions of the crystal.
(5) ESD measures device sensitivity and immunity to damage caused by electrostatic discharges into the device.
(6) The level listed is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe
manufacturing with a standard ESD control process, and manufacturing with less than 500-V HBM is possible, if necessary precautions
are taken. Pins listed as 1000 V can actually have higher performance.
(7) The level listed is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250-V CDM allows safe
manufacturing with a standard ESD control process, and manufacturing with less than 250-V CDM is possible, if necessary precautions
are taken. Pins listed as 250 V can actually have higher performance.
4.1.2 Recommended Operating Conditions
Rating
Condition
Sym
Min
Max
Unit
Power supply voltage
VDD_IN
2.2
4.8
V
I/O power supply voltage
VDD_IO
1.62
1.92
V
High-level input voltage
Low-level input voltage
I/O input rise and all times,10% to 90% — asynchronous mode
I/O input rise and fall times, 10% to 90% — synchronous mode (PCM)
Default
Default
V_IH
0.65 x VDD_IO
VDD_IO
V
V_IL
0
0.35 x VDD_IO
V
t_r and t_f
1
10
ns
1
2.5
ns
Voltage dips on VDD_IN (V_BAT)
duration = 577 μs to 2.31 ms, period = 4.6 ms
Maximum ambient operating temperature^{(1) (2)}
400
mV
–40
85
°C
(1) The device can be reliably operated for 7 years at T_ambient of 85°C, assuming 25% active mode and 75% sleep mode (15,400
cumulative active power-on hours).
(2) A crystal-based solution is limited by the temperature range required of the crystal to meet 20 ppm.
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