English
Language : 

OMAP-L137 Datasheet, PDF (115/219 Pages) Texas Instruments – Low-Power Applications Processor
www.ti.com
OMAP-L137 Low-Power Applications Processor
SPRS563A – SEPTEMBER 2008 – REVISED OCTOBER 2008
6.11.1 Interfacing to SDRAM
The EMIFB supports a glueless interface to SDRAM devices with the following characteristics:
• Pre-charge bit is A[10]
• The number of column address bits is 8, 9, 10 or 11
• The number of row address bits is 13 (in case of mobile SDR, number of row address bits can be 9,
10, 11, 12, or 13)
• The number of internal banks is 1, 2 or 4
Figure 6-20 shows an interface between the EMIFB and a 2M × 16 × 4 bank SDRAM device. In addition,
Figure 6-21 shows an interface between the EMIFB and a 2M × 32 × 4 bank SDRAM device and
Figure 6-22 shows an interface between the EMIFB and two 4M × 16 × 4 bank SDRAM devices. Refer to
Table 6-22, as an example that shows additional list of commonly-supported SDRAM devices and the
required connections for the address pins. Note that in Table 6-22, page size/column size (not indicated in
the table) is varied to get the required addressability range.
EMIFB
EMB_CS
EMB_CAS
EMB_RAS
EMB_WE
EMB_CLK
EMB_SDCKE
EMB_BA[1:0]
EMB_A[11:0]
EMB_WE_DQM[0]
EMB_WE_DQM[1]
EMB_D[15:0]
SDRAM
2M x 16 x 4
CE
Bank
CAS
RAS
WE
CLK
CKE
BA[1:0]
A[11:0]
LDQM
UDQM
DQ[15:0]
Figure 6-20. EMIFB to 2M × 16 × 4 bank SDRAM Interface
EMIFB
EMB_CS
EMB_CAS
EMB_RAS
EMB_WE
EMB_CLK
EMB_SDCKE
EMB_BA[1:0]
EMB_A[11:0]
EMB_WE_DQM[3:0]
EMB_D[31:0]
SDRAM
2M x 32 x 4
Bank
CE
CAS
RAS
WE
CLK
CKE
BA[1:0]
A[11:0]
DQM[3:0]
DQ[31:0]
Figure 6-21. EMIFB to 2M × 32 × 4 bank SDRAM Interface
Submit Documentation Feedback
Peripheral Information and Electrical Specifications 115