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BQ24262_15 Datasheet, PDF (10/56 Pages) Texas Instruments – bq2426x 3-A, 30-V, Host-Controlled Single-Input, Single-Cell Switched-Mode Li-Ion Battery Charger With Power-Path Management and USB-OTG Support
Not Recommended for New Designs : bq24260, bq24261
bq24260, bq24261, bq24261M, bq24262
SLUSBU4D – DECEMBER 2013 – REVISED APRIL 2015
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 7, VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VBOVP_HYS
tDGL(BOVP)
ICbCLIMIT
TSHTDWN
VBOVP hysteresis
BOVP Deglitch
Cycle-by-cycle current limit
Thermal trip
Thermal hysteresis
Lower limit for VBAT falling from above VBOVP
Battery entering/exiting BOVP
VSYS shorted
1
% of
VBATREG
8
ms
4.1
4.5
4.9
A
150
°C
10
°C
TREG
Thermal regulation threshold Input current begins to cut off
Safety Timer Accuracy
–20%
125
°C
20%
PWM
RDSON_Q1
Internal top MOSFET ON-
resistance
YFF Package: Measured from IN to SW
RGE Package: Measured from IN to SW
75
120 mΩ
80
135 mΩ
RDSON_Q2
Internal bottom N-channel
MOSFET ON-resistance
YFF Package: Measured from SW to PGND
RGE Package: Measured from SW to PGND
75
115 mΩ
80
135 mΩ
fOSC
Oscillator frequency
DMAX
Maximum duty cycle
DMIN
Minimum duty cycle
BATTERY-PACK NTC MONITOR (1)
1.35
1.5
1.65 MHz
95%
—
0%
VHOT
VWARM
VCOOL
VCOLD
TSOFF
High temperature threshold
Warm temperature threshold
Cool temperature threshold
Low temperature threshold
TS Disable threshold
tDGL(TS)
Deglitch time on TS change
I2C-COMPATIBLE INTERFACE
VTS falling, 2% VDRV Hysteresis
VTS falling, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 2% VDRV Hysteresis
VTS rising, 4% VDRV Hysteresis
Applies to VHOT, VWARM, VCOOL and VCOLD
27.3
36.0
54.7
58.2
80
30
38.3
56.4
60
50
32.6
41.2
58.1
61.8
85
%VDRV
%VDRV
%VDRV
%VDRV
%VDRV
ms
VIH
Input low threshold level
VIL
Input low threshold level
VOL
Output low threshold level
IBIAS
High-Level leakage current
tWATCHDOG
tI2CRESET
OTG BOOST SUPPLY
VPULL-UP=1.8 V, SDA and SCL
VPULL-UP=1.8 V, SDA and SCL
IL=5 mA, sink current
VPULL-UP=1.8 V, SDA and SCL
1.3
V
0.4
V
0.4
V
1 μA
30
50
s
700
ms
IQBAT_ BOOST
Quiescent current during
boost mode (BAT pin)
3.3 V < VBAT < 4.5 V, no switching
100 µA
Battery voltage range for
specified boost operation
VBAT falling
3.3
4.5
V
VIN_BOOST
Boost output voltage (to pin
VBUS)
3.3 V < VBAT < 4.5 V over line and load
4.95
5.05
5.2
V
IBO
Maximum output current for
boost
3.3 V < VBAT < 4.5 V
BOOST_ILIM = 1
BOOST_ILIM = 0
1000
500
mA
IBLIMIT
Cycle by cycle current limit for
boost (measured at low-side 3.3 V < VBAT < 4.5 V
FET)
BOOST_ILIM = 1
BOOST_ILIM = 0
4
A
2
VBOOSTOVP
Overvoltage protection
threshold for boost (IN pin)
Signals fault and exits boost mode
5.8
6
6.2
V
tDGL(BOOST_OVP)
Deglitch Time, VIN OVP in
Boost Mode
170
µs
VBURST(ENT)
Upper VIN voltage threshold to
enter burst mode (stop
switching)
5.1
5.2
5.3
V
VBURST(EXIT)
Lower VBUS voltage threshold
to exit burst mode (start
switching)
4.9
5
5.1
V
10
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