STCOM Datasheet, PDF (54/58 Pages) STMicroelectronics – Powerline communication and application system-on-chip

Electrical characteristics
STCOM
4.5
Embedded Flash characteristics
Symbol
Table 30. Flash memory characteristics
Parameter⁽¹⁾
Conditions
Min. Typ.⁽²⁾ Max.⁽³⁾ Max.⁽⁴⁾ Unit
t_DWPRG Double word program
Not including SW overhead
18
t_MPRG Module program (512 kB)
Not including SW overhead
1.3
t_BKPRG Bank program (1056 KB)
Not including SW overhead
2.6
t_ER16K Sector pre-program and erase (16 KB)
0.2
t_ER32K Sector pre-program and erase (32 KB)
0.3
t_ER64K Sector pre-program and erase (64 KB)
0.4
t_ER128K Sector pre-program and erase (128 KB)
0.6
t_MKER Module erase (512 KB)
4.8
t_BKER Bank erase (1056 KB)
8
t_PABT Program abort latency
-
t_EABT Erase abort latency
-
t_ESUS Erase suspend latency
-
t_ESRT Erase suspend request rate
20 -
1. Based on characterization, not tested in production.
2. Assuming nominal supply values and operation at 25 °C, 0 cycles.
3. Assuming nominal supply values and operation at 25 °C, 100 cycles.
4. Assuming nominal supply values and operation at 125 °C, 100 Kcycles.
50
1.65
6.6
0.5
0.6
0.9
1.3
7.6
12.6
10
30
30
-
500 s
33 s
66 s
5.0 s
5.0 s
5.0 s
5.0 s
55 s
91 s
10 s
30 s
30 s
- ms
.
Table 31. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min.⁽¹⁾ Typ.
N_END
t_RET
Endurance
Data retention
TA = -40 to +85 °C
1K
1 kcycle at TA = +85 °C⁽²⁾
15
1 kcycles⁽²⁾ at TA = +55 °C (see⁽²⁾)
30
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
Max. Unit
Cycles
Years
Years
Table 32. Flash memory current consumption
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
I(Flash_VDD3V3)
Current consumption from 3.3 V
supply source
During the erase of all the sectors -
see⁽¹⁾
1.6
mA
I(Flash_VDD1V2)
Current consumption from 1.2 V
supply source
During the erase of all the sectors⁽¹⁾
12.3
mA
1. During characterization, not tested in production. The values exclude the consumption from other pins.
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