S6E2HG Datasheet, PDF (80/161 Pages) SPANSION – fpu built-in

S6E2HG Series
Table 12-10 Typical and Maximum Current Consumption in Low-voltage Detection Circuit, Main Flash Memory Write/erase
Value
Parameter
Symbol Pin Name Conditions
Min
Typ
Max
Unit
Remarks
Low-voltage
detection circuit
(LVD) power
supply current
ICCLVD
At operation
-
4
7
μA
For occurrence of
interrupt
Main flash
memory
write/erase
current
ICCFLASH
VCC
At Write/Erase
-
13.4
15.9
mA
Work flash
memory
write/erase
current
ICCWFLASH
At Write/Erase
-
11.5
13.6
mA *1
1: When programming or erase in flash memory, Flash Memory Write/Erase current (ICCFLASH) is added to the Power
supply current (ICC).
Table 12-11 Peripheral Current Dissipation
Clock System
Peripheral
Unit
HCLK
PCLK1
PCLK2
GPIO
DMAC
DSTC
External bus I/F
SD card I/F
CAN
Base timer
Multi-functional
timer/PPG
Quadrature
position/Revolution
counter
A/DC
Muli-function serial
All ports
-
-
-
-
1 ch.
4 ch.
1 unit / 4 ch.
1 unit
1 unit
1 ch.
Frequency (MHz)
40
80
160
Unit
0.16
0.32
0.62
0.68
1.35
2.63
0.93
1.88
3.65
0.17
0.34
0.71
mA
0.01
0.02
0.03
0.47
0.92
1.85
0.18
0.37
0.73
0.61
1.22
2.43
0.04
0.07
0.14 mA
0.22
0.44
0.88
0.30
0.60
-
mA
Remarks
TA=+25°C,
VCC=3.3 V
TA=+25°C,
VCC=3.3 V
TA=+25°C,
VCC=3.3 V
Document Number: 001-98943 Rev. *A
Page 80 of 161