S6E2HG Datasheet, PDF (150/161 Pages) SPANSION – fpu built-in

S6E2HG Series
12.8 MainFlash Memory Write/Erase Characteristics
Parameter
Value
Min Typ Max ^Unit
Sector erase
time
Large Sector
Small Sector
-
Half word
(16-bit)
write time
Write cycles
< 100 times
Write cycles
-
> 100 times
0.7 3.7
s
0.3 1.1
100
12
μs
200
Chip erase time
-
13.6 68
s
Remarks
Includes write time prior to internal
erase
Not including system-level overhead
time
Includes write time prior to internal
erase
(VCC = 2.7V to 5.5V)
Write cycles and data hold time
Erase/Write cycles (cycle)
Data hold time (year)
1,000
20 *
10,000
10 *
100,000
5*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test result
into average temperature value at + 85°C) .
12.9 WorkFlash Memory Write/Erase Characteristics
Parameter
Sector erase time
Half word (16-bit)
write time
Chip erase time
Value
Min Typ Max
-
0.3 1.5
-
20 200
-
1.2
6
Write cycles and data hold time
Unit
Remarks
s
Includes write time prior to internal
erase
μs
Not including system-level overhead
time
s
Includes write time prior to internal
erase
(VCC = 2.7V to 5.5V)
Erase/Write cycles (cycle)
Data hold time (year)
1,000
20 *
10,000
10 *
100,000
5*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test result
into average temperature value at + 85°C) .
Document Number: 001-98943 Rev. *A
Page 150 of 161