S29NS-J Datasheet, PDF (62/85 Pages) SPANSION – 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories

Data Sheet
AC Characteristics
Asynchronous Read
Parameter
JEDEC Standard Description
0P
(66 MHz)
0L
(54 MHz) Unit
t_CE
Access Time from CE# Low
Max
65
70
ns
t_ACC Asynchronous Access Time
Max
65
70
ns
t_AVDP AVD# Low Time
Min
11
12
ns
t_AAVDS Address Setup Time to Rising Edge of AVD
Min
4
5
ns
t_AAVDH Address Hold Time from Rising Edge of AVD
Min
3.7
3.7
ns
t_OE
Output Enable to Output Valid
Max
11
13.5
ns
Read
Min
0
ns
t_OEH
Output Enable Hold Time
Toggle and Data# Polling Min
10
ns
t_OEZ Output Enable to High Z (See Note)
Max
10
ns
Note: Not 100% tested.
CE#
OE#
WE#
A/DQ15–
A/DQ0
t_OEH
t_OE
t_CE
RA
t_ACC
Valid RD
t_OEZ
Am_ax–A16
RA
t_AAVDH
AVD#
Note: RA = Read Address, RD = Read Data.
Figure 13.
t_AAVDS
t_AVDP
Asynchronous Mode Read
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S29NS-J
S29NS-J_00_A10 March 22, 2006