CP2110 Datasheet, PDF (5/26 Pages) Silicon Laboratories – SINGLE-CHIP HID USB TO UART BRIDGE

CP2110
2. Electrical Characteristics
Table 1. Absolute Maximum Ratings
Parameter
Test Condition Min
Typ
Max Unit
Ambient Temperature under Bias
–55
—
125
°C
Storage Temperature
–65
—
150
°C
Voltage on RST, GPIO or UART Pins with respect to
GND
V_IO > 2.2 V
V_IO < 2.2 V
–0.3
—
5.8
V
–0.3
—
V_IO +
3.6
Voltage on VBUS with respect to GND
V_DD > 3.0 V
V_DD not powered
–0.3
–0.3
—
5.8
V
—
V_DD +
3.6
Voltage on V_DD or V_IO with respect to GND
–0.3
—
4.2
V
Maximum Total Current through V_DD, V_IO, and GND
—
—
500
mA
Maximum Output Current Sunk by RST or any I/O
pin
—
—
100
mA
Note: Stresses above those listed may cause permanent damage to the device. This is a stress rating only, and functional
operation of the devices at or exceeding the conditions in the operation listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 2. Global DC Electrical Characteristics
V_DD = 3.0 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Test Condition
Min
Typ
Max
Unit
Digital Supply Voltage (V_DD)
3.0
Digital Port I/O Supply Voltage (V_IO)
–GM packages only
1.8
V_DD = V_IO on –GM1
Voltage on V_PP with respect to GND during a
V_IO > 3.3 V
5.75
ROM programming operation
Capacitor on V_PP for ROM programming
Supply Current¹
Supply Current¹
Supply Current—USB Pull-up²
—
Normal Operation;
—
V_REG Enabled
Suspended;
—
V_REG Enabled
—
—
3.6
V
—
V_DD
V
—
V_IO + 3.6
V
4.7
—
µF
11.3
12.5
mA
120
220
µA
200
228
µA
Specified Operating Temperature Range
–40
—
+85
°C
Notes:
1. If the device is connected to the USB bus, the USB pull-up current should be added to the supply current to calculate
total required current.
2. The USB pull-up supply current values are calculated values based on USB specifications.
Rev. 1.2
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