S-807 Datasheet, PDF (8/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR

HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series

Electrical Characteristics
1. S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-V_DET
V_HYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
V_DET
I_SS
V_DD
I_OUT
∆-V_DET
∆Ta
V_DD = 3.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
Pch (CMOS V_DD = 4.8 V
output)
V_DS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
1.464 1.500 1.536
V
1
-V_DET
-V_DET
-V_DET
V
1
×0.02 ×0.05 ×0.08

1.4
3.5
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
0.36 0.62

4

±0.19
 mV/°C 
2. S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-V_DET
V_HYS
Current consumption
Operating voltage
Output current
Temperature
characteristic of -
V_DET
I_SS
V_DD
I_OUT
∆-V_DET
∆Ta
V_DD = 3.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
Pch (CMOS V_DD = 4.8 V
output)
V_DS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
1.561 1.600 1.639
V
1
-V_DET
-V_DET
-V_DET
V
1
×0.02 ×0.05 ×0.08

1.4
3.5
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
0.36 0.62

4

±0.20
 mV/°C 
3. S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-V_DET
V_HYS
Current consumption I_SS
Operating voltage
V_DD
Output current
I_OUT
Temperature
characteristic of -
V_DET
∆-V_DET
∆Ta
V_DD = 3.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
Pch (CMOS V_DD = 4.8 V
output)
V_DS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
1.659 1.700 1.741
V
1
-V_DET
-V_DET
-V_DET
V
1
×0.02 ×0.05 ×0.08

1.4
3.5
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
0.36 0.62

4

±0.21
 mV/°C 
Seiko Instruments Inc.
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