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S-807 Datasheet, PDF (13/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
16. S-80728AL-AR-X, S-80728AN/AN-DR-X
S-80728SL-AR-X, S-80728SN-DR-X (Detection voltage : 2.732 to 2.868 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.732 2.800 2.868
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4
 ±0.35  mV/°C 
17. S-80729AL/AL-AS-X, S-80729AN-DS-X (Detection voltage : 2.830 to 2.970 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
2.830 2.900 2.970
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4
 ±0.36  mV/°C 
18. S-80730AL/AL-AT-X, S-80730AN/AN-DT-X
S-80730SL-AT-X, S-80730SN-DT-X (Detection voltage : 2.928 to 3.072 V)
(Unless otherwise specified : Ta=25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit Test
circuit
Detection voltage
-VDET
2.928 3.000 3.072
V
1
Hysteresis width
VHYS
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
Current consumption ISS
VDD = 4.5 V

1.0
3.0
µA
2
Operating voltage
VDD
1.0

15.0
V
1
Output current
IOUT Nch
VDD = 1.2 V 0.23 0.50

mA
3
VDS = 0.5 V
VDD = 2.4 V 1.60 3.70

Pch (CMOS VDD = 4.8 V 0.36 0.62

4
output)
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
 ±0.38  mV/°C 
12
Seiko Instruments Inc.