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| S-807 Datasheet, PDF (24/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR | |||
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
49. S-80763AN-JT-X (Detection voltage : 6.148 to 6.452 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
â-VDET
âTa
VDD = 7.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
Pch (CMOS VDD = 8.4 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
6.148 6.300 6.452
V
1
-VDET
-VDET
-VDET
V
1
Ã0.02 Ã0.05 Ã0.08

1.9
3.6
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

4.13 8.56

0.59 0.96

4

±0.81
 mV/°C 
50. S-80777SN-J8-X (Detection voltage : 7.515 to 7.885 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
â-VDET
âTa
VDD = 9.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
VDD = 6.0 V
Pch (CMOS VDD = 9.6 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
7.515 7.700 7.885
V
1
-VDET
-VDET
-VDET
V
1
Ã0.02 Ã0.05 Ã0.08

2.2
4.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

4.13 8.56

4.73 9.60

0.65 1.05

4

±0.99
 mV/°C 
Test Circuits
(1)
(2)
VDD
R(100 kâ¦)*
S-807
OUT
VDD
VDD
V
Series
CRT
A
VDD
S-807
Series
OUT
VSS
VSS
* R is unnecessary for CMOS output products.
(3)
(4)
VDD
VDD
S-807
OUT
V
Series
A
VDD
VDD
S-807
V
Series
V
VDS
A
OUT
VSS
V
VSS
VDS
Figure 8
Seiko Instruments Inc.
23
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