S-807 Datasheet, PDF (40/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR

HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
3. Change of detection voltage
In Nch open-drain output products of the S-807 Series, detection voltage can be changed with resistance dividers or diodes
as shown in Figures 29 and 30. In Figure 29, hysteresis width is also changed.
V_DD
RA
(RA≤7.5kΩ)
RB
S-
V_IN
807XX
AN/SN
OUT
+
(Nch open-drain
-
products)
V_S
Detection voltage=
RA+RB
RB
•-V_DET
Hysteresis width= ^RA+RB •-VHYS
RB
Note 1: The hysteresis width will be a little
wider than the value of the formula
above, because of the through current,
if RA and RB are larger.
Note 2: RA should be 7.5kΩ or less for
purp^Fo^igse^uro^ef ²p⁹rotection against
oscillation.
Figure 29
V_DD
V_f1
V_f2
S-
V_{IN 807XX}
AN/SN
OUT
(Nch open-drain
products)
V_SS
Detection voltage=V_f1+V_f2+-V_DET
Figure 30

Notes
• In CMOS output products of S-807 Series, high through current flows when detecting or releasing. If a high impedance is
connected to the input, oscillation may be caused by the through current when lowering the voltage during releasing.
• In TO-92 products, since there are projections and resin burrs on the roots of the lead terminals formed at the Tiebar-cut, do
not solder to them.
• When designing for mass production using an application circuit described here, take into account the deviation of
components and temperature characteristics.
• Seiko Instruments Inc. cannot take any responsibility for the patents on the circuits described here.
Seiko Instruments Inc.
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