S-807 Datasheet, PDF (19/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR

HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
34. S-80743AL/AL-A7-X, S-80743AN/AN-D7-X (Detection voltage : 4.196 to 4.404 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-V_DET
V_HYS
Current consumption I_SS
Operating voltage
V_DD
Output current
I_OUT
Temperature
characteristic of -
V_DET
∆-V_DET
∆Ta
V_DD = 6.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
V_DD = 2.4 V
V_DD = 3.6 V
Pch (CMOS V_DD = 6.0 V
output)
V_DS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
4.196 4.300 4.404
V
1
-V_DET
-V_DET
-V_DET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

0.46 0.75

4
 ±0.54  mV/°C 
35. S-80744AL/AL-A8-X, S-80744AN/AN-D8-X, S-80744SN-D8-X (Detection voltage : 4.294 to 4.506 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-V_DET
V_HYS
Current consumption I_SS
Operating voltage
V_DD
Output current
I_OUT
Temperature
characteristic of -
V_DET
∆-V_DET
∆Ta
V_DD = 6.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
V_DD = 2.4 V
V_DD = 3.6 V
Pch (CMOS V_DD = 6.0 V
output)
V_DS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
4.294 4.400 4.506
V
1
-V_DET
-V_DET
-V_DET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

0.46 0.75

4
 ±0.55  mV/°C 
36. S-80744HL/HL-U8-X (Detection voltage : 4.295 to 4.605 V)
Parameter
Symbol
Conditions
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
-V_DET
+V_DET
I_SS
V_DD
I_OUT
V_DD = 6.0 V
Nch
V_DS = 0.5 V
V_DD = 1.2 V
V_DD = 2.4 V
Temperature
characteristic of -
V_DET
∆-V_DET
∆Ta
Pch
V_DS = 0.5 V
V_DD = 4.8 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit ^Test
circuit
4.295 4.450 4.605
V
1


4.70
V
1

2.6
6.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4
 ±0.56  mV/°C 
18
Seiko Instruments Inc.