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S-807 Datasheet, PDF (23/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
46. S-80753AN (Detection voltage : 5.172 to 5.428 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
5.172 5.300 5.428
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

0.46 0.75

4
 ±0.66  mV/°C 
47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
Pch (CMOS VDD = 6.0 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
5.368 5.500 5.632
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

0.46 0.75

4
 ±0.69  mV/°C 
48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 7.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
Pch (CMOS VDD = 8.4 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
5.953 6.100 6.247
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.9
3.6
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

3.18 7.00

4.13 8.56

0.59 0.96

4
 ±0.78  mV/°C 
22
Seiko Instruments Inc.
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