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S-807 Datasheet, PDF (16/42 Pages) Seiko Instruments Inc – HIGH-PRECISION VOLTAGE DETECTOR
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
25. S-80735AL/AL-AZ-X, S-80735AN/AN-DZ-X
S-80735SL-AZ-X, S-80735SN-DZ-X (Detection voltage : 3.416 to 3.584 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.416 3.500 3.584
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4

±0.44
 mV/°C 
26. S-80736AL-A0-X, S-80736AN/AN-D0-X (Detection voltage : 3.513 to 3.687 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 4.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.513 3.600 3.687
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4

±0.45
 mV/°C 
27. S-80737AL/AL-A1-X, S-80737AN/AN-D1-X (Detection voltage : 3.611 to 3.789 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 6.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
Pch (CMOS VDD = 4.8 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
3.611 3.700 3.789
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08

1.0
3.0
µA
2
1.0

15.0
V
1
0.23 0.50

mA
3
1.60 3.70

0.36 0.62

4

±0.46
 mV/°C 
Seiko Instruments Inc.
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