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S-1701 Datasheet, PDF (24/70 Pages) Seiko Instruments Inc – HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | |||
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HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION
S-1701 Series
Rev.2.4_00
Table 27 (2/2)
Detector block
(Ta = 25 °C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit Test Circuit
Detection voltage*5 âVDET
â
âVDET(S)
à 0.99
âVDET(S)
âVDET(S)
à 1.01
V
14
Hysteresis width
VHYS
â
3
5
7
%
14
Output current
IDOUT
Nch, VDOUT = 0.5 V
VIN = 1.4 V
(1.5 V ⤠âVDET(S) ⤠5.5 V)
1.0
3.0
â mA
15
VIN = 2.0 V
(2.1 V ⤠âVDET(S) ⤠5.5 V)
2.0
4.5
â mA
15
VIN = 3.0 V
(3.1 V ⤠âVDET(S) ⤠5.5 V)
3.0
5.5
â mA
15
VIN = 4.0 V
(4.1 V ⤠âVDET(S) ⤠5.5 V)
4.0
6.0
â mA
15
VIN = 5.0 V
(5.1 V ⤠âVDET(S) ⤠5.5 V)
5.0
6.5
â mA
15
Detection voltage
temperature
coefficient*6
ââVDET â40 ⤠Ta ⤠+85 °C*8
âTa ⢠âVDET
â
±140
±550
ppm/
°C
14
Delay time
tD
Input voltage
VIN
Current leakage of
output transistor
ILEAK
No delay (tD = 60 µs)
tD = 50 ms
tD = 100 ms
â
VIN = 6.5 V, VDOUT = 6.5 V
â
60
100 µs
14
tD
tD
tD
ms
14
à 0.65
à 1.35 ms
14
0.8
â
6.5 V
â
â
â
0.1 µA
15
*1. VOUT(S): Specified output voltage
VOUT(E): Actual output voltage at the fixed load
The output voltage when fixing IOUT (= 30 mA) and inputting VOUT(S) + 1.0 V
*2. The output current at which the output voltage becomes lower than 95% of VOUT(E) after gradually increasing the output
current.
*3. Vdrop = VIN1 â (VOUT3 Ã 0.98)
VOUT3 is the output voltage when VIN = VOUT(S) + 1.0 V and IOUT = 100 mA.
VIN1 is the input voltage at which the output voltage becomes 98% of VOUT3 after gradually decreasing the input voltage.
*4. The change in temperature [mV/°C] of the regulator output voltage is calculated using the following equation.
[ ] [ ] [ ] âVOUT
mV/°C
= V *1
OUT(S)
V
*2 Ã
âVOUT
ppm/°C *3 ÷ 1000
âTa
âTa ⢠VOUT
*1. The change in temperature of the output voltage
*2. Specified output voltage
*3. Output voltage temperature coefficient
*5. âVDET: Actual detection voltage, âVDET(S): Specified detection voltage
*6. The change in temperature [mV/°C] of the detector detection voltage is calculated using the following equation.
ââVDET
âTa
[mV/°C]*1 = âVDET(S) (Typ.) [V]*2 Ã
ââVDET
âTa ⢠âVDET
[ppm/°C]*3 ÷ 1000
*1. The change in temperature of the detection voltage
*2. Specified output voltage
*3. Detection voltage temperature coefficient
*7. The output current can be at least this value.
Due to restrictions on the package power dissipation, this value may not be satisfied. Attention should be paid to the power
dissipation of the package when the output current is large. This specification is guaranteed by design.
*8. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
24
Seiko Instruments Inc.
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