HYB514800BJ Datasheet, PDF (9/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
AC Characteristics (cont’d)⁴⁾
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
-60
min. max.
Data to OE low
t_DZ0
0
–
delay ¹⁴⁾
CAS high to data
t_CDD
20
–
delay ¹⁵⁾
OE high to data
t_ODD
20
–
delay ¹⁵⁾
CAS hold time after t_OECH
20
–
OE low
Limit Values
-70
min. max.
0
–
min.
0
-80
max.
–
20
–
20
–
20
–
20
–
20
–
20
–
Unit
ns
ns
ns
ns
Capacitance
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS, CAS, WE)
Output capacitance (IO1 to IO8)
Symbol
C_i1
C_i2
C_io
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
133