HYB514800BJ Datasheet, PDF (1/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

512kx8-Bit Dynamic RAM
HYB 514800BJ -60/-70/-80
Advanced Information
• 512 288 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
60 ns (-60 version)
70 ns (-70 version)
80 ns (-80 version)
CAS access time:
20 ns
Cycle time:
110 ns (-60 version)
130 ns (-70 version)
150 ns (-80 version)
• Fast page mode cycle time
45 ns (-60 version)
45 ns (-70 version)
50 ns (-80 version)
• Single + 5 V (± 10 %) supply with a
built-in V_bb generator
Ordering Information
Type
HYB 514800BJ-60
Ordering Code
Q67100-Q849
HYB 514800BJ-70
Q67100-Q850
HYB 514800BJ-80
Q67100-Q851
• Low power dissipation
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
max. 468 mW active (-80 version)
• Standby power dissipation:
11 mW standby standby (TTL)
5.5 mW max.standby (CMOS)
• Output unlatched at cycle end allows two-
dimensional chip selection
• Read, write, read-modify write, CAS-before-
RAS refresh, RAS-only refresh, hidden
refresh, fast page mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Packages: P-SOJ-28-2 400 mil width
Package
P-SOJ-28-2
P-SOJ-28-2
P-SOJ-28-2
Descriptions
DRAM
(access time 60 ns)
DRAM
(access time 70 ns)
DRAM
(access time 80 ns)
Semiconductor Group
125
01.95