HYB514800BJ Datasheet, PDF (13/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
V
RAS
IH
VIL
V
IH
CAS
VIL
V
IH
A0 - A9 _VIL
V
IH
WRITE
VIL
V
IH
OE
VIL
I/O1-I/O8
V
IH
(Inputs) _VIL
I/O1-I/O8
V
OH
(Outputs) _VOL
tRC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS
tASR
tRAD
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tCWL
tRWL
tWP
tCRP
tASR
.
Row
Address
tOEH
tDZO
tDZC
tODD
tDS ^tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
Write Cycle (OE Controlled Write)
Semiconductor Group
137