HYB514800BJ Datasheet, PDF (5/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current during
CAS before RAS refresh mode
-60 version
-70 version
-80 version
I_CC5
–
1
I_CC6
–
110
–
100
–
90
Unit Test
Condition
mA ¹⁾
mA ²⁾
Semiconductor Group
129