HYB514800BJ Datasheet, PDF (4/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power Supply voltage ..................................................................................................... – 1 to + 7 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 5 mA)
Output low voltage (I_OUT = 4.2 mA)
Input leakage current, any input
(0 V < V_in < 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 < V_OUT < V_CC)
Average V_CC supply current
-60 version
-70 version
-80 version
V_ih
2.4
6.5
V_il
– 1.0 0.8
V_oh
2.4
–
V_ol
–
0.4
I_I(L)
– 10
10
I_o(L)
– 10
10
I_CC1
–
110
–
100
–
90
Standby V_CC supply current
(RAS = CAS = V_ih)
I_CC2
–
2
Average V_CC supply current during RAS-only I_CC3
refresh cycles
-60 version
–
110
-70 version
–
100
-80 version
–
90
Average V_CC supply current during fast page I_CC4
mode operation
-60 version
–
70
-70 version
–
60
-80 version
–
50
Unit Test
Condition
V
1)
V
1)
V
1)
V
1)
µA ¹⁾
µA ¹⁾
mA ^{2) 3)}
mA –
mA ²⁾
mA ^{2) 3)}
Semiconductor Group
128