HYB514800BJ Datasheet, PDF (10/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
Notes:
1) All voltages are referenced to V_SS
2) I_CC1 , I_CC3 , I_CC4 and I_CC6 depend on cycle rate.
3) I_CC1 , I_CC4 depend on output loading.
4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has
to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter,
a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
5) V_ih (min.) and V_il (max.) are reference levels for measuring timing of input signals. Transition times are also
measured between V_ih and V_il .
6) Measured with a load equivalent to 2 TTL loads and 100 pF.
7) t_off (max.), t_OEZ (max.) defines the time at which the output achieves the open-circuit conditions and are not
referenced to output voltage levels.
8) Either t_RCH or t_RRH must be satisfied for a read cycle.
9) These parameters are references to the CAS leading edge in early write and to the WRITE leading edge in
read-write cycles.
10) t_WCS , t_RWD , t_CWD and t_AWD are not restrictive operating parameters. They are included in the data sheet as
electrical characteristics only.
If t_WCS > t_WCS (min.), the cycle is an early write cycle and data out pin will remain open-circuit (high impedance)
through the entire cycle; if t_RWD > t_RWD (min.), t_CWD > t_CWD (min.) and t_AWD > t_AWD (min.), the cycle is a read-
write cycle and I/O will contain data read from the selected cell. If neither of the above sets of conditions is
satisfied, the condition of I/O (at access time) is indeterminate.
11) Operation within the t_RCD (max.) limit ensure that t_RAC (max.) can be met. t_RCD (max.) is specified as a
reference point only. If t_RAD is greater than the specified t_RCD (max.) limit, then access time is controlled by
t_CAC .
12) Operation within the t_RAD (max.) limit ensured that t_RAC (max.) can be met. t_RAD (max.) is specified as a
reference point only. If t_RAD is greater than the specified t_RAD (max.) limit, then access time is controlled by t_AA .
13) AC measurements assume t_T = 5 ns.
14) Either t_DZC or t_DZO must be satisfied.
15) Either t_CDD or t_ODD must be satisfied.
Semiconductor Group
134