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HYB514800BJ Datasheet, PDF (22/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM
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HYB 514800BJ -60/-70/-80
512k x 8 DRAM
V IH
RAS
V IL
V IH
CAS
V IL
A0-A9
V IH
V IL
Read Cycle
WRITE
V IH
V IL
OE
V IH
V IL
I/O1-I/O8
V IH
(Inputs)
V IL
I/O1-I/O8
VOH
(Outputs)
VOL
Write Cycle
V IH
WRITE
V IL
OE
V IH
V IL
I/O1-I/O8
V IH
(Inputs)
V IL
I/O1-I/O8
V
(Outputs)
IH
V IL
Read-Modify-Write Cycle
V IH
WRITE
V IL
V IH
OE
V IL
I/O1-I/O8
V IH
(Inputs)
V IL
I/O1-I/O8
VOH
(Outputs)
VOL
tCSR
tCHR
tWRP
tWRH
tWRP
tWRH
tCPT
tRAS
tRSH
tCAS
tASC
tCAH
tRAL
Column
Address
tRCS
tAAtCAC
tRP
tASR
Row
Address
tRRH
tRCH
tOEA
tDZC
tDZO
tCDD
tODD
tWCS
tOFF
tCLZ
tOEZ
Valid Data Out
tRWL
tCWL
tWCH
tWRP
tWRH
tDS
tDH
Valid Data In
HI-Z
tRCS
tAWD
tCWD
tCAC
tAA
tOEA
tCWL
tRWL
tWP
tOEH
tDZC
tDZO
tCLZ
tCAC
tDS
tDH
Data In
tODD
tOEZ
HI-Z
D.Out
HI-Z
CAS-Before-RAS Refresh Counter Test Cycle
Semiconductor Group
146