HYB514800BJ Datasheet, PDF (2/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The
HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514800BJ to be packed in a standard plastic 400mil wide P-SOPJ-28 package. This
package size provides high system bit densities and is compatible with commonly used automatic
testing and insertion equipment. System oriented feature include single + 5 V (± 10 %) power
supply, direct interfacing with high performance logic device families such as Schottky TTL.
Pin Definitions and Functions
A0-A8,A9R
RAS
CAS
WRITE
OE
IO1 - IO8
N.C.
V_CC
V_SS
Address Input
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
No Connection
Power Supply (+ 5 V)
Ground (0 V)
Pin Configuration
(top view)
P-SOJ-28-2 ( 400 mil width)
Semiconductor Group
126