HYB514800BJ Datasheet, PDF (8/22 Pages) Siemens Semiconductor Group – 512kx8-Bit Dynamic RAM

HYB 514800BJ -60/-70/-80
512k x 8 DRAM
AC Characteristics (cont’d)⁴⁾
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
-60
min. max.
Data hold time ⁹⁾
t_DH
15
–
Refresh period
t_REF
–
16
Write command
t_WCS
0
–
setup time ¹⁰⁾
CAS to WRITE delay t_CWD
50
–
time ¹⁰⁾
RAS to WRITE delay t_RWD
90
–
time ¹⁰⁾
Column address to t_AWD
60
–
WRITE delay time ¹⁰⁾
CAS setup time (CBR t_CSR
5
–
cycle)
CAS hold time (CBR t_CHR
15
–
cycle)
RAS to CAS
t_RPC
0
–
precharge time
CAS precharge time t_CPT
30
–
(CAS before RAS
counter test cycle)
Write to RAS
precharge time
(CBR cycle)
t_WRP
10
–
Write to RAS hold t_WRH
10
–
time (CBR cycle)
OE command hold t_OEH
20
–
time
OE acces time
t_OEA
–
20
RAS hold time
t_ROH
10
–
referenced to OE
Output buffer turn-off t_OEZ
0
20
delay from OE
Data to CAS low
t_DZC
0
–
delay ¹⁴⁾
Limit Values
-70
min. max.
15
–
–
16
0
–
min.
15
–
0
-80
max.
–
16
–
50
–
50
–
100
–
110
–
65
–
70
–
5
–
5
–
15
–
15
–
0
–
0
–
40
–
40
–
10
–
10
–
10
–
10
–
20
–
20
–
–
20
–
20
10
–
10
–
0
20
0
20
0
–
0
–
Unit
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Semiconductor Group
132