K1S321615M Datasheet, PDF (6/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)(Address Controlled, CS=OE=VIL, ZZ=WE=VIH, UB or/and LB=VIL)
Address
Data Out
tRC
tAA
tOH
Previous Data Valid
Data Valid
UtRAM
TIMING WAVEFORM OF READ CYCLE(2)(ZZ=WE=VIH)
Address
CS
UB, LB
OE
Data out
High-Z
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tRC1
tRC2
Data Valid
tOH
tHZ
tBHZ
tOHZ
(READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
3. The minimum read cycle(tRC) is determined later one of the tRC1 and tRC2.
-6-
Revision 3.0
May 2001