K1S321615M Datasheet, PDF (1/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
- Design target
Draft Date
Remark
September 4, 2000 Advance
0.1
Revised
- Change package type from FBGA to TBGA.
February 9, 2001 Preliminary
- Improve operating current from 30mA to 25mA.
- Change input and output reference voltage from 1.1V to 1.5V at AC
test condition.
- Expand max operating voltage from 3.0V to 3.3V.
- Expand max operating temperature from 70°C to 85°C.
- Release speed from 70/85ns to 100ns.
- Release standby current form 170µA to 200µA.
- Add Power up timing diagram.
- Add AC characteristics for continuous write.
1.0
Finalize
March 30, 2001 Final
- Release standby current form 200µA to 250µA.
- Release deep power down current form 10µA to 20µA.
- Release tWC for continuous write operation from 100ns to 110ns.
- Release tCW for continuous write operation from 90ns to 100ns.
- Release tAW for continuous write operation from 90ns to 100ns.
- Release tBW for continuous write operation from 90ns to 100ns.
- Release tWP for continuous write operation from 90ns to 100ns.
2.0
Revised
- Add product list
April 16, 2001
Final
3.0
Revised
- Improve standby current from 250µA to 150µA.
May 28, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 3.0
May 2001