K1S321615M Datasheet, PDF (3/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
UtRAM
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=2.7V) for a minium 200µs with CS=high.
3. Issue read operation at least twice.
FUNCTIONAL DESCRIPTION
CS
ZZ
OE
WE
LB
H
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
L
X¹⁾
X¹⁾
X¹⁾
L
H
X¹⁾
X¹⁾
H
L
H
H
H
L
L
H
H
H
X¹⁾
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
X¹⁾
L
L
L
H
X¹⁾
L
H
L
H
X¹⁾
L
L
1. X means dont’ care.(Must be low or high state)
UB
I/O1~8 I/O9~16
Mode
Power
X¹⁾
High-Z High-Z
Deselected
Standby
X¹⁾
High-Z High-Z
Deselected
Deep Power Down
H
High-Z High-Z
Deselected
Standby
X¹⁾
High-Z High-Z
Output Disabled
Active
L
High-Z High-Z
Output Disabled
Active
H
Dout High-Z
Lower Byte Read
Active
L
High-Z Dout
Upper Byte Read
Active
L
Dout
Dout
Word Read
Active
H
Din
High-Z
Lower Byte Write
Active
L
High-Z Din
Upper Byte Write
Active
L
Din
Din
Word Write
Active
ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
Storage temperature
PD
TSTG
1.0
W
-65 to 150
°C
Operating Temperature
TA
-25 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
STANDBY MODE STATE MACHINES
Power On
CS=VIH
CS=VIL, UB or/and LB=VIL
ZZ=VIH
Standby
Mode
Initial State
(Wait 200µs)
Active
Read Operation Twice
CS=VIH, ZZ=VIH
CS=VIH
ZZ=VIH
ZZ=VIL
ZZ=VIL
Deep Power
Down Mode
STANDBY MODE CHARACTERISTIC
Power Mode
Standby
Deep Power Down
Memory Cell Data
Valid
Invaild
Standby Current(µA)
150
20
Wait Time(µs)
0
200
-3-
Revision 3.0
May 2001