K1S321615M Datasheet, PDF (2/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
UtRAM
2M x 16 bit Uni-Transistor CMOS RAM
FEATURES
• Process Technology: CMOS
• Organization: 2M x16 bit
• Power Supply Voltage: 2.7~3.3V
• Three state output status
• Deep Power Down: Memory cell data hold invalid
• Package Type: 48-TBGA-9.00x12.00
• Compatible with Low Power SRAM
PRODUCT FAMILY
GENERAL DESCRIPTION
The K1S321615M is fabricated by SAMSUNGs’ advanced
CMOS technology using one transistor memory cell. The device
support, extended temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports deep power down mode for low standby current.
Product Family
Operating Temp.
Vcc Range
Speed
(tRC)
Power Dissipation
Standby Deep power Operating
(ISB1, Max.) down(ISBD, Max.) (ICC2, Max.)
PKG Type
K1S321615M-E Extended(-25~85°C) 2.7~3.3V 100ns 150µA
20µA
25mA 48-TBGA-9.00x12.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
ZZ
B
I/O9 UB
A3
A4
CS I/O1
C
I/O10 I/O11 A5
A6 I/O2 I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Addresses
Row
select
Memory array
D
Vss I/O12 A17 A7 I/O4 Vcc
E
Vcc I/O13 DNU A16 I/O5 Vss
F
I/O15 I/O14 A14 A15 I/O6 I/O7
G
I/O16 A19 A12 A13 WE I/O8
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
H
A18 A8
A9 A10 A11 A20
48-TBGA: Top View(Ball Down)
CS
ZZ
OE
Control Logic
WE
UB
LB
Name
Function
CS Chip Select Input
ZZ Deep Power Down
OE Output Enable Input
WE Write Enable Input
A0~A20 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
1) Reserved for future user
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Do Not Use¹⁾
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2-
Revision 3.0
May 2001